Behind the Mask
These articles report on the research and manufacturing work being conducted in
the photomask and reticle community.
(Behind the Mask): Performing 3-D metrology and advanced repairs on leading-edge photomasks
A survey of advanced photomask repair and metrology challenges discusses a system that combines stylus nanoprofilometry, focused ion beam, and electron-beam techniques. (August/September 2005)
(Behind
the Mask) Meeting airborne molecular contamination challenges in
laser pattern generators
An OEM and a vendor specializing in lithography molecular-contamination
control develop an air-filtration system to combat airborne molecular
contamination in maskmaking tools. (January/February
2004)
(Behind
the Mask) Studying chemically amplified resists and top antireflective
coatings in photomask fabrication
Partitioning tests on photomasks involving two different chemically
amplified resists demonstrate how to increase CD uniformity and
decrease the incidence of missing-chrome defects. (August/September
2003)
(Behind
the Mask) Using simulation-based technology to qualify alt PSM for
193-nm lithography
Defect
printability experiments have validated the suitability of a software-based
simulation system for next-generation semiconductor applications.
(January/February 2003)
(Behind
the Mask) Streamlining the front-end reticle fabrication process
by improving mask ordering
A software package that functions in tandem with SEMI specification
P10 helps a mask supplier to automate the mask-ordering process,
thereby improving cycle times and mask quality. (June
2002)
(Behind the Mask) Implementing
simulation-based mask-qualification technology
Simulation-based
mask qualification provides data on wafer CD, the impact of defects
on linewidth control, the quality of mask repairs, and feature specs
without having to print a wafer. (February 2002)
(Behind the Mask) Optimizing
polymers to increase pellicle lifetime and transmission for 157-nm lithography
The search for 157-nm pellicle materials has led to the development
of fluoropolymers with sufficient transparency to produce transmissions
>95%, but the problem of photochemical darkening remains. (June 2001)
(Behind the Mask) Examining the
challenges posed by NGL photomask fabrication Revolutionary
changes in next-generation lithography masks are being driven by the need for
small CD and image-placement accuracy, novel substrates, and the control of
subresolution defects. (February 2001)
(Behind the Mask)) Comparing
software and hardware simulation tools on an embedded-attenuated PSM
Virtual Stepper and aerial image measurements systems can analyze defect-induced
CD error as a function of various isolated defect sizes on a production mask.
(June 2000)
(Behind the Mask) Investigating defect
inspection and sensitivity analysis for MoSi-based PSMs
Because MoSi's optical properties are significantly different from conventional
chromium (Cr)-based materials, special MoSi defect inspection and characterization
are necessary. (April 2000)
(Behind the Mask) Integrating
a CD SEM into an optical system for photomask metrology operations
The limitations of optical tools for small-dimension and phase-shift mask
measurement dictate that photomask manufacturers consider a dual-tool metrology
strategy. (Feb 2000)
(Behind the Mask) Managing reticle
quality for subwavelength lithography
RQM aids in the understanding of reticle defect printability and optimizes
return on investment by creating a reticle-sampling plan that takes into account
device production parameters. (September 2000)

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