Working
in the wet cleans group at International Sematech in January 2000,
Pat Lysaght was casting about for a method his team could use to
quantify its edge wraparound cleaning technique. The senior member
of the technical staff approached two colleagues in the consortium's
analytical lab for suggestions.
Carolyn
Gondran, a surface analyst who was then the lab manager, and Chris
Sparks, an analytical specialist, briefed him on the available analytical
techniques. Told of the limitations of these methods, Lysaght pressed
for some brainstorming sessions, recalls Sparks. Those early idea-batting
meetings led to a technique and a prototype tool for measuring trace-metal
contamination on the edge, bevel, and edge exclusion area of 200-
and 300-mm wafers. The results compare favorably with established
analytical techniques, Sparks and team assert.
Called
BEAT for bevel edge analysis tool, the prototype has several functions,
says Sparks. It can monitor process development on a film-stripping
system such as the SEZ tools that Lysaght had been using for wafer
backside cleaning. It can also be used to verify the effectiveness
of the back-surface wet etch of a spinning, suspended wafer, Lysaght
notes.
Experts
working in this area have long recognized the need for accurate
measurements in the edge exclusion and bevel areas, Sparks notes.
Several standard analytical techniques are inadequate. These techniques
are total reflection x-ray fluorescence (TXRF), time-of-flight secondary
ion mass spectroscopy (TOF-SIMS), vapor-phase decomposition inductively
coupled mass spectrometry (VPD-ICP-MS), and direct acid-drop-decomposition
inductively coupled mass spectrometry (DADD-ICP-MS).
 |
CENTERED: The circular vacuum
chuck on the BEAT tool has an alignment jig that automaticlaly
locates a wafer's center, the Sematech development team says.
PHOTO COURTESY OF INTERNATIONAL SEMATECH
|
The
brainstorming team drafted John Donahue, an equipment maintenance
technician at Sematech, to help build a prototype. Sparks says Gondran
found enough money in the lab budget to pay for construction of
the BEAT. Meanwhile, Sparks met with Gary Donahue, John's brother,
to work on actual construction of the tool. Gary Donahue works at
Universal Engineering, the custom design and engineering firm in
Lowell, MA, that made the prototype.
The
BEAT tool works by supporting the wafer vertically, bringing an
extraction solution up to the chosen depth on the wafer's edge,
and rotating the edge slowly through the solution at approximately
eight minutes per rotation. Finally, the solution is analyzed for
trace metals by ICP-MS.
Asked
how difficult it was to develop the analytical method, Sparks says,
"Once we decided on a solution extraction technique, we knew it
would be a feasible method as long as we could create a hydrophobic
surface in the area we wanted to sample."
After
that point, it became a matter of "engineering the design of the
jig to support and rotate the wafer, which did take some effort.
Gary Donahue at Universal Engineering took our ideas and sketches
and turned them into a working device. There were no off-the-shelf
parts used except for the stepper motor and vacuum chuck. Gary did
the design and machining of the parts, which required a substantial
time investment on his part."
Developing
a way to swing the alignment jig so that the sample boat could be
raised up to the wafer's edge proved to be Gary Donahue's greatest
engineering feat, Sparks says. This function requires a high level
of repeatability because the alignment of the wafer around the center
of the BEAT's vacuum chuck "is critical for precise sampling."
Sparks
and crew also discovered initially that control over the wafer's
rotation was not precise enough. Michael Pendley from Sematech's
calibration lab corrected the problem by building a variable-speed
control box for the stepper motor. Sparks also had the original
sample boats redesigned in order to improve the tool's precision.
Molded ultrapure PFA was inserted into the boat's PTFE housing to
avoid the negative effects of a meniscus by changing the dimensions
of the boats.
As
Sparks, Gondran, Lysaght, and Donahue reported at the SPIE conference,
experimental results show the BEAT tool performing well compared
with different standard analytical techniques. Broadly, the experiment
consisted of using a dip method to contaminate wafers with copper,
using nine-point TXRF to analyze the result, analyzing the bevel/edge
with a 4-mm included edge, and analyzing the remainder of the wafers
by VPD-ICP-MS. The team then remeasured by TXRF to examine the extraction
efficiency of VPD.
The
BEAT tool did not cause any contamination, Sparks says. At the SPIE
presentation Sparks noted possible causes for higher copper measured
at the control wafer levels. "From experiments since the time of
that presentation we have determined that, while there is a background
interference present, we are actually measuring copper that is at
the edge of the wafer.
"These
are new test wafers. Where does it come from?" Sparks asks. "I'm
not really sure. We've never seen copper on test wafers before with
TXRF or VPD-ICP-MS. The differences between those techniques and
BEAT are that we are measuring only the edge of the wafer with BEAT,
and we also collect our sample from both sides of the wafer."
Sparks
and Lysaght assert that the BEAT analytical tool is important for
FEOL manufacturing. At Sematech in particular, potential cross-contamination
looms large. The consortium has "subsets of shared process tools
between FEOL and BEOL" such as metrology and lithography systems,
Sparks says. "We also process a variety of materials here, like
copper versus aluminum interconnects, or high-k versus silicon dioxide
gates, so we are being very cautious with potential cross-contamination."
Lysaght
notes that front-end processing "involves transistor production
and the most critical clean process," pregate dielectric deposition.
In addition, the dopant activation temperatures "are sufficiently
high enough to breach surface gettering and drive surface metals
contamination into the wafer and potentially into the active area
of transistors."
International
Sematech is not pursuing a patent on the BEAT tool, Sparks says.
"If anyone wants to build one, they can contact Universal Engineering."
He welcomes inquiries from interested parties, adding, "I'd be happy
to talk with them about our experiences."